US Patent Application 18101319. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Wan Gi Sohn of Suwon-si (KR)

Kyeong Hwan Kang of Suwon-si (KR)

Sung Hyun Bae of Suwon-si (KR)

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18101319 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a semiconductor memory device with storage patterns on a substrate.

• The substrate extends in two directions that intersect each other.
• The storage patterns are spaced apart from each other in both directions.
• Each storage pattern extends in a third direction that intersects the plane defined by the first two directions.
• Each storage pattern has a face in contact with a storage contact.
• The face of each storage pattern has a width along each of the first two directions.
• The width of the face of the storage patterns increases relative to each other in the first direction.
• The spacing between adjacent storage patterns decreases relative to each other in the first direction.

Original Abstract Submitted

A semiconductor memory device is provided that includes: a substrate extending in each of a first direction and a second direction that intersect each other; and storage patterns disposed on the substrate, and spaced apart from each other in each of the first and second directions. Each of the storage patterns extends in a third direction intersecting a plane defined by the first and second directions, and comprises a face in contact with a respective one from among storage contacts. The face of each of the storage patterns has a first width along the first direction and a second width along the second direction. The first width of the face of the storage patterns increases in a relative manner to each other in the first direction, while spacings in the first direction between adjacent ones of the storage patterns decrease in a relative manner to each other in the first direction.