US Patent Application 18095926. SEMICONDUCTOR DEVICE MEASUREMENT METHOD USING X-RAY SCATTERING AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD INCLUDING THE MEASUREMENT METHOD simplified abstract

SEMICONDUCTOR DEVICE MEASUREMENT METHOD USING X-RAY SCATTERING AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD INCLUDING THE MEASUREMENT METHOD

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Jaeyong Lee of Suwon-si (KR)]]

[[Category:Hidong Kwak of Suwon-si (KR)]]

[[Category:Minjung Shin of Suwon-si (KR)]]

[[Category:Seungryeol Oh of Suwon-si (KR)]]

[[Category:Chuhee Lee of Suwon-si (KR)]]

[[Category:Byunghyun Hwang of Suwon-si (KR)]]

SEMICONDUCTOR DEVICE MEASUREMENT METHOD USING X-RAY SCATTERING AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD INCLUDING THE MEASUREMENT METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18095926 titled 'SEMICONDUCTOR DEVICE MEASUREMENT METHOD USING X-RAY SCATTERING AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD INCLUDING THE MEASUREMENT METHOD

Simplified Explanation

This patent application describes a method for measuring semiconductor devices using X-ray scattering. Here are the key points:

• The method involves preparing a semiconductor device with a repeat structure.
• X-rays are irradiated onto the semiconductor device to obtain a first X-ray scattering image.
• A second X-ray scattering image is calculated through simulation, which corresponds to a target repeat structure for the semiconductor device.
• A repeat structure mask is generated by analyzing the position of a signal for a regular repeat structure from the second X-ray scattering image.
• The repeat structure mask is then removed from the first X-ray scattering image, resulting in an error image.
• The error image is analyzed to calculate irregularities for the repeat structure of the semiconductor device.

Original Abstract Submitted

A semiconductor device measurement method using X-ray scattering includes preparing a semiconductor device including a repeat structure, irradiating X-rays onto the semiconductor device to obtain a first X-ray scattering image, calculating a second X-ray scattering image through simulation, the second X-ray scattering image corresponding to a target repeat structure for the semiconductor device, generating a repeat structure mask by analyzing a position of a signal for a regular repeat structure from the second X-ray scattering image, removing the repeat structure mask from the first X-ray scattering image and generating an error image; and analyzing the error image and calculating irregularities for the repeat structure of the semiconductor device.