US Patent Application 18095561. SEMICONDUCTOR DEVICE simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Intak Jeon of Suwon-si (KR)]]

[[Category:Hanjin Lim of Suwon-si (KR)]]

[[Category:Hyungsuk Jung of Suwon-si (KR)]]

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18095561 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device with specific layers and materials.

  • The device includes a substrate, lower electrodes, a support layer, an upper electrode, a dielectric layer, and a blocking layer.
  • The lower electrodes are placed on the substrate, and the support layer is in contact with them, extending parallel to the substrate's upper surface.
  • The upper electrode is positioned on top of the lower electrodes and the support layer.
  • A dielectric layer is present between the lower electrodes and the upper electrode, as well as between the support layer and the upper electrode.
  • A blocking layer is placed between the support layer and the dielectric layer, and it has a material with a higher bandgap energy than the support layer's material.
  • The dielectric layer is in contact with the lower electrodes and is separated from the support layer by the blocking layer.


Original Abstract Submitted

A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate, at least one support layer in contact with the plurality of lower electrodes and extending in a direction, parallel to an upper surface of the substrate, an upper electrode disposed on the plurality of lower electrodes and the at least one support layer, a dielectric layer between the plurality of lower electrodes and the upper electrode and between the at least one support layer and the upper electrode, and a blocking layer disposed between the at least one support layer and the dielectric layer, and including a material having a bandgap energy greater than a bandgap energy of a material of the at least one support layer. The dielectric layer is in contact with the plurality of lower electrodes and is spaced apart from the at least one support layer by the blocking layer.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_18095561._SEMICONDUCTOR_DEVICE_simplified_abstract&oldid=9157"