US Patent Application 18089956. SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Inventors

Seonhaeng Lee of Suwon-si (KR)

Sangwoo Pae of Suwon-si (KR)

Namhyun Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

• This abstract for appeared for patent application number 18089956 Titled 'SEMICONDUCTOR DEVICE'

Simplified Explanation

The abstract describes a semiconductor device that has a specific structure. It includes a fin pattern that extends from a substrate in one direction. There are two active layers on top of the fin pattern, with the second layer being higher than the first layer. These layers form a structure. There are two gates that intersect the active layers, surrounding their surfaces and extending in another direction. The second gate is parallel to the first gate. The first active layer has a region that extends from where it overlaps with the first gate, and the second active layer also has a region that extends from where it overlaps with the first gate. However, the second region is shorter than the first region.

Original Abstract Submitted

A semiconductor device includes a first fin pattern protruding from a substrate and extending in a first direction; first and second active layers extending in the first direction on the first fin pattern, the second active layer being at a level higher than a level of the first active layer, the first and second active layers forming a first active layer structure; a first gate intersecting the first and second active layers, surrounding upper and lower surfaces and opposing side surfaces of each of the first and second active layers, and extending in a second direction; and a second gate intersecting the first and second active layers, surrounding upper and lower surfaces and opposing side surfaces of each of the first and second active layers, extending in the second direction, and disposed to be parallel to the first gate. The first active layer includes a first region extending from a first overlapping region of the first active layer overlapping the first gate by a first length in a direction away from the second gate, and the second active layer includes a first region extending from a first overlapping region of the second active layer overlapping the first gate by a second length in a direction away from the second gate, the second length shorter than the first length.