US Patent Application 18082886. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18082886 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with an upper pad, upper dielectric layer, lower pad, and lower dielectric layer. The upper pad and upper dielectric layer surround the lower pad and lower dielectric layer, creating an upper space and a lower space. The upper space includes a section where the lower pad overlaps with the upper pad and a section where the lower dielectric layer overlaps with the upper dielectric layer. The lower pad has a protrusion that extends towards the overlapping section of the upper space. The protrusion of the lower pad is higher than the bottom surface of the upper dielectric layer.
Bullet points explaining the patent/innovation: - The semiconductor device has a unique structure with upper and lower pads surrounded by dielectric layers. - The upper space and lower space created by the pads and dielectric layers provide a distinct configuration. - The overlapping sections in the upper space and lower space enhance the functionality of the device. - The protrusion of the lower pad towards the upper space contributes to the overall design and performance of the device. - The specific positioning of the protrusion relative to the upper dielectric layer is a key aspect of the innovation.
Original Abstract Submitted
Disclosed is a semiconductor device comprising an upper pad surrounded by an upper dielectric layer, a lower pad in contact with the upper pad and the upper dielectric layer surrounded by a lower dielectric layer. The upper pad, the upper dielectric layer, the lower pad, and the lower dielectric layer define an upper space surrounding a lower portion of the upper pad and a lower space surrounding an upper portion of the lower pad. The upper space includes a first pad overlap section overlapping the lower pad and a first dielectric layer overlap section overlapping the lower dielectric layer. The lower pad includes a first protrusion part protruding toward the first pad overlap section of the upper space. The first protrusion part of the lower pad is at a level higher than that of a bottom surface of the upper dielectric layer.
