US Patent Application 18082872. DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS simplified abstract

DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS

Organization Name

Applied Materials, Inc.

Inventor(s)

Lakmal Charidu Kalutarage of San Jose CA (US)

Mark Joseph Saly of Milpitas CA (US)

Bhaskar Jyoti Bhuyan of Milpitas CA (US)

Thomas Joseph Knisley of Livonia MI (US)

Kelvin Chan of San Ramon CA (US)

Regina Germanie Freed of Los Altos CA (US)

David Michael Thompson of San Jose CA (US)

Susmit Singha Roy of Sunnyvale CA (US)

Madhur Sachan of Belmont CA (US)

DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18082872 titled 'DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS

Simplified Explanation

- The patent application describes methods of depositing a metal oxo photoresist using dry deposition processes. - The method involves forming a first metal oxo film on a substrate using a first vapor phase process that includes a first metal precursor vapor and a first oxidant vapor. - A second metal oxo film is then formed over the first metal oxo film using a second vapor phase process that includes a second metal precursor vapor and a second oxidant vapor. - The purpose of this method is to provide a simplified and efficient way of depositing metal oxo photoresist films on substrates. - The dry deposition processes described in the patent application eliminate the need for wet chemical processes, making the overall process more environmentally friendly. - The use of metal oxo photoresist films can have various applications in industries such as semiconductor manufacturing, photovoltaics, and microelectronics.

Original Abstract Submitted

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.