US Patent Application 18079537. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seung Min Song of Suwon-si (KR)
Myung Il Kang of Suwon-si (KR)
Do Young Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18079537 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
- The patent application describes a semiconductor device that includes a substrate and an active pattern on the substrate. - The device also includes a plurality of lower nanosheets stacked on the active pattern. - A separation structure is included, which is spaced apart from the lower nanosheets and consists of three layers stacked on each other. - The device further includes a plurality of upper nanosheets stacked on the separation structure. - A gate electrode surrounds the separation structure, lower nanosheets, and upper nanosheets, extending in a different horizontal direction. - The first and third layers of the separation structure are made of the same material, while the second layer is made of a different material. - The innovation lies in the specific arrangement and composition of the nanosheets, separation structure, and gate electrode in the semiconductor device.
Original Abstract Submitted
A semiconductor device includes a substrate, an active pattern on the substrate, a plurality of lower nanosheets stacked on the active pattern, a separation structure spaced apart from the plurality of lower nanosheets in the vertical direction and disposed on the plurality of lower nanosheets, and including first to third layers sequentially stacked on each other, a plurality of upper nanosheets spaced apart from the separation structure in the vertical direction and disposed on the separation structure, and stacked on the separation structure, and a gate electrode extending in a second horizontal direction different from the first horizontal direction, and surrounding the separation structure, each of the plurality of lower nanosheets, and each of the plurality of upper nanosheets. The first and third layers include the same material, and each of the first layer and the third layer includes a material different from a material of the second layer.
