US Patent Application 18076388. GLOBAL DATA LINE OF MULTI-ARRAY SYNCHRONOUS RANDOM ACCESS MEMORY (SRAM) simplified abstract
Contents
GLOBAL DATA LINE OF MULTI-ARRAY SYNCHRONOUS RANDOM ACCESS MEMORY (SRAM)
Organization Name
Inventor(s)
Hee Choul Park of San Jose CA (US)
GLOBAL DATA LINE OF MULTI-ARRAY SYNCHRONOUS RANDOM ACCESS MEMORY (SRAM) - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18076388 Titled 'GLOBAL DATA LINE OF MULTI-ARRAY SYNCHRONOUS RANDOM ACCESS MEMORY (SRAM)'
Simplified Explanation
The abstract describes a circuit for a synchronous random access memory (SRAM) that uses a single-rail static-operation global data line. The circuit includes automatic three-state drivers and sense amplifiers connected to the global data line. It also includes a latch connected to the global data line. The abstract also mentions a method for operating the global data line, which involves connecting it to the automatic three-state drivers and operating them without a gating signal. The global data line is operated with a static signal.
Original Abstract Submitted
Various aspects include a circuit having a single-rail static-operation global data line of a synchronous random access memory (SRAM). The circuit can include one or more automatic three-state drivers coupled to the single-rail static operation global data line of the SRAM. The circuit can include one or more sense amplifiers coupled to the one or more automatic three-state drivers. The circuit can include a latch coupled to the single-rail static-operation global data line. Some embodiments can include a method for operating a global data line of a multi-array SRAM. The method can include connecting a single-rail static-operation global data line of the SRAM to one or more automatic three-state drivers of the SRAM, and operating the one or more automatic three-state drivers without a gating signal. The method can include operating the single-rail global data line of the SRAM with a static signal.
