US Patent Application 18073739. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Jun Ha Kwak of Gyeonggi-do (KR)
Seung Hwan Kim of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18073739 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The patent application describes a method for fabricating a semiconductor device.
- The method involves forming a sacrificial pad with multiple line portions and auxiliary lines over a lower structure.
- An etch target layer is then formed over the sacrificial pad.
- Multiple openings are created by etching the etch-target layer, stopping at the sacrificial pad.
- Pillars are formed to fill these openings.
- An isolation trench is formed by etching the etch-target layer, stopping at the sacrificial pad.
- Finally, a pad-type recess is created by removing the sacrificial pad through the isolation trench.
Original Abstract Submitted
A method for fabricating a semiconductor device includes: forming a sacrificial pad including a plurality of line portions and a plurality of auxiliary lines over a lower structure; forming an etch target layer over the sacrificial pad; forming a plurality of openings by etching the etch-target layer and stopping the etching at the sacrificial pad; forming a pillar filling the openings; forming an isolation trench by etching the etch-target layer and stopping the etching at the sacrificial pad; and forming a pad-type recess by removing the sacrificial pad through the isolation trench.
