US Patent Application 18062825. SEMICONDUCTOR DEVICE simplified abstract

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SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Kiseok Lee of Hwaseong-si (KR)

Byeongjoo Ku of Suwon-si (KR)

Keunnam Kim of Suwon-si (KR)

Wonsok Lee of Suwon-si (KR)

Moonyoung Jeong of Suwon-si (KR)

Min Hee Cho of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18062825 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device with a specific structure and arrangement of components.

  • The device includes a bit line, which is a conductive line that extends in a certain direction.
  • On top of the bit line, there is a semiconductor pattern that consists of two vertical portions and a horizontal portion.
  • The two vertical portions are opposite to each other in the direction of the bit line.
  • The horizontal portion connects the two vertical portions.
  • Adjacent to the horizontal portion, there are two word lines, which are also conductive lines.
  • A gate insulating pattern is present between each vertical portion and its corresponding word line.
  • The bottom surface of the horizontal portion is positioned at a height that is either lower or equal to the uppermost surface of the bit line.


Original Abstract Submitted

A semiconductor device may include a bit line extending in a first direction, a semiconductor pattern on the bit line, the semiconductor pattern including first and second vertical portions, which are opposite to each other in the first direction, and a horizontal portion connecting the first and second vertical portions, first and second word lines on the horizontal portion to be adjacent to the first and second vertical portions, respectively, and a gate insulating pattern between the first vertical portion and the first word line and between the second vertical portion and the second word line. A bottom surface of the horizontal portion may be located at a height that is lower than or equal to the uppermost surface of the bit line.