US Patent Application 18056736. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME simplified abstract

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

Inventors

Bong Kwan Baek of Suwon-si (KR)

Jun Hyuk Lim of Suwon-si (KR)

Jung Hwan Chun of Suwon-si (KR)

Kyu-Hee Han of Suwon-si (KR)

Jong Min Baek of Suwon-si (KR)

Koung Min Ryu of Suwon-si (KR)

Jung Hoo Shin of Suwon-si (KR)

Sang Shin Jang of Suwon-si (KR)

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME - A simplified explanation of the abstract

• This abstract for appeared for patent application number 18056736 Titled 'SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME'

Simplified Explanation

This abstract describes semiconductor devices that have been improved in terms of performance and reliability. The devices consist of various components, including an active pattern, gate structures, a source/drain pattern, a source/drain contact, and a contact liner. The contact liner is a layer that runs along the side of the source/drain contacts.

What sets these devices apart is that the carbon concentration in the contact liner varies at different points along its length. Specifically, the carbon concentration is higher at a second point compared to a first point. Additionally, the first point is located at a lower height from the upper surface of the active pattern compared to the second point. This difference in carbon concentration and height contributes to the improved performance and reliability of the semiconductor devices.

Original Abstract Submitted

Semiconductor devices with improved performance and reliability and methods for forming the same are provided. The semiconductor devices include an active pattern extending in a first direction, gate structures spaced apart from each other in the first direction on the active pattern, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a contact liner extending along a sidewall of the source/drain contacts. A carbon concentration of the contact liner at a first point of the contact liner is different from a carbon concentration of the contact liner at a second point of the contact liner, and the first point is at a first height from an upper surface of the active pattern, the second point is at a second height from the upper surface of the active pattern, and the first height is smaller than the second height.