US Patent Application 18044959. SEMICONDUCTOR LASER DEVICE simplified abstract
Contents
SEMICONDUCTOR LASER DEVICE
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
SEMICONDUCTOR LASER DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18044959 titled 'SEMICONDUCTOR LASER DEVICE
Simplified Explanation
The patent application describes a semiconductor laser device with a specific structure for guiding laser beams.
- The device includes various layers such as cladding layers, optical guide layers, and a contact layer.
- It also has a resonator with a front end surface and a rear end surface.
- The device features a ridge region that guides the laser beam between the front and rear end surfaces.
- The ridge region consists of a ridge inner region with a specific refractive index and ridge outer regions on both sides.
- The ridge outer regions have current non-injection structures and a width greater than the distance to the active layer.
Original Abstract Submitted
A semiconductor laser device of the present disclosure includes: a first-conductivity-type cladding layer, a first-conductivity-type-side optical guide layer, an active layer, a second-conductivity-type-side optical guide layer, a second-conductivity-type cladding layer, and a second-conductivity-type contact layer laminated above a semiconductor substrate; a resonator having a front end surface and a rear end surface; and a ridge region for guiding a laser beam between the front and rear end surfaces. The ridge region is composed of a ridge inner region in which an effective refractive index is n, and ridge outer regions which are provided on both sides of the ridge inner region and in which an effective refractive index is n, the ridge outer regions having current non-injection structures. A ridge outer region width Wis greater than a distance from a lower end of each current non-injection structure to the active layer.
