US Patent Application 18044780. METHOD OF PATTERNING A LAYER OF SUPERCONDUCTOR MATERIAL simplified abstract

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METHOD OF PATTERNING A LAYER OF SUPERCONDUCTOR MATERIAL

Organization Name

MICROSOFT TECHNOLOGY LICENSING, LLC

Inventor(s)

Asbjørn Cennet Cliff Drachmann of Copenhagen (DK)

Karl Petersson of Copenhagen (DK)

METHOD OF PATTERNING A LAYER OF SUPERCONDUCTOR MATERIAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18044780 titled 'METHOD OF PATTERNING A LAYER OF SUPERCONDUCTOR MATERIAL

Simplified Explanation

- The patent application describes a method for patterning a layer of superconductor material without using a chemical etch. - The method involves forming a mask over the superconductor material and depositing a layer of anodizable metal in the openings of the mask. - The mask is then removed, and anodic oxidation is performed, where the layer of anodizable metal protects the superconductor material from oxidation. - The superconductor material used in this method is aluminum. - This method allows for improved resolution in patterning the superconductor material and avoids damage to other components or interfaces. - The patent application also mentions the use of a titanium layer to protect an aluminum layer from anodic oxidation. - The method described in the patent application can be used to obtain a semiconductor-superconductor hybrid device.


Original Abstract Submitted

A method of patterning a layer of superconductor material comprises: forming a mask over the layer of superconductor material, the mask having at least one opening; depositing a layer of anodizable metal in the at least one opening, over a portion of the layer of superconductor material; removing the mask; and performing anodic oxidation, whereby the layer of anodizable metal protects the portion of the layer of the superconductor material from the anodic oxidation. The superconductor material is aluminium. The method allows for patterning of the superconductor material without the use of a chemical etch. This may in turn allow for improvements in resolution, and/or may avoid damage to further components or interfaces between components which may be present during the patterning. Also provided are the use of a titanium layer to protect an aluminium layer from anodic oxidation, and a semiconductor-superconductor hybrid device obtainable by the method.

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