US Patent Application 18044193. OPTICAL SEMICONDUCTOR DEVICE simplified abstract
Contents
OPTICAL SEMICONDUCTOR DEVICE
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Keisuke Matsumoto of Tokyo (JP)
Ryosuke Miyagoshi of Tokyo (JP)
OPTICAL SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18044193 Titled 'OPTICAL SEMICONDUCTOR DEVICE'
Simplified Explanation
The abstract describes an optical semiconductor device that includes several components. These components include a ridge structure on a semiconductor substrate, a buried layer on the sides of the ridge structure, a second cladding layer and contact layer on top of the ridge structure, a mesa structure reaching from the contact layer to the substrate, a heat dissipation layer on the contact layer, a protective film on the sides of the mesa structure and the ends of the contact layer, and an electrode connected to the contact layer.
Original Abstract Submitted
An optical semiconductor device of the present disclosure comprises: a ridge structure formed on a first-conductivity-type semiconductor substrate; a buried layer buried on both side surfaces of the ridge structure; a second-conductivity-type second cladding layer and a second-conductivity-type contact layer laminated on the top of the ridge structure and the surface of the buried layer; a stripe-shaped mesa structure formed of a mesa reaching from the second-conductivity-type contact layer to the first-conductivity-type semiconductor substrate; a heat dissipation layer formed on the surface of the second-conductivity-type contact layer; a mesa protective film covering both side surfaces of the mesa structure and both end portions of the surface of the second-conductivity-type contact layer; and a second-conductivity-type-side electrode electrically connected to the second-conductivity-type contact layer.
