US Patent Application 18040179. AVALANCHE PHOTO DIODE simplified abstract
Contents
AVALANCHE PHOTO DIODE
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Harunaka Yamaguchi of Tokyo (JP)
AVALANCHE PHOTO DIODE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18040179 Titled 'AVALANCHE PHOTO DIODE'
Simplified Explanation
The abstract describes the structure of a semiconductor device, specifically a solar cell. It consists of several layers stacked on a semiconductor substrate. These layers include a buffer layer, a multiplication layer, a light-absorbing layer, a window layer, and a contact layer.
The window layer is doped with an impurity to create a p-type region. The bandgap of the window layer is larger than the bandgap of the light-absorbing layer. This means that the window layer allows certain wavelengths of light to pass through while absorbing others.
The window layer is composed of two layers: a first window layer and a second window layer. The second window layer has a higher diffusion rate for the impurity compared to the first window layer. This means that the impurity will spread more easily in the second window layer.
The first window layer is made of either Ru, Rh, or Os-doped InP (indium phosphide). These materials are used to enhance the performance of the solar cell.
Original Abstract Submitted
A buffer layer (), a multiplication layer (), a light-absorbing layer (), a window layer (), and a contact layer () are sequentially stacked on a semiconductor substrate (). The window layer () is doped with an impurity to form a p-type region (). A bandgap of the window layer () is greater than a bandgap of the light-absorbing layer (). The window layer () includes a first window layer (), and a second window layer () formed on the first window layer (). A diffusion rate of the impurity in the second window layer () is higher than a diffusion rate of the impurity in the first window layer (). The first window layer () is a Ru, Rh or Os-doped InP layer.
