US Patent Application 18034235. SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SAME simplified abstract

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SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SAME

Organization Name

SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor(s)

Hitoshi Sumiya of Osaka (JP)

Jin Hwa Lee of Osaka (JP)

SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18034235 titled 'SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SAME

Simplified Explanation

The patent application describes a synthetic single crystal diamond that contains conjugants made up of one vacancy and one boron atom. The concentration of boron atoms in the diamond ranges from 0.1 ppm to 100 ppm.

  • Synthetic single crystal diamond with specific boron atom composition
  • Conjugants in the diamond consist of one vacancy and one boron atom
  • Boron atom concentration ranges from 0.1 ppm to 100 ppm


Original Abstract Submitted

Provided is a synthetic single crystal diamond containing conjugants each composed of one vacancy and one boron atom, wherein the concentration of boron atoms based on atom numbers is 0.1 ppm or more and 100 ppm or less.

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