US Patent Application 18032786. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Atsutoshi Inokuchi of Miyagi (JP)

Yasuhiko Saito of Miyagi (JP)

Kiyoshi Maeda of Miyagi (JP)

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18032786 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Simplified Explanation

The patent application describes a method for processing a substrate in a substrate processing device. Here are the key points:

• The method involves supplying a process gas to a processing container containing a stage with a workpiece.
• The workpiece has an etching target film and a mask on the etching target film.
• First, a plasma processing is performed on the workpiece using a first plasma generated from the process gas under specific conditions.
• Then, a second plasma processing is performed on the workpiece using a second plasma generated from the process gas.
• The second plasma generation condition differs from the first plasma generation condition in terms of radio-frequency power and processing time.
• However, the second plasma generation condition is the same as the first plasma generation condition in other aspects.
• The steps of performing plasma processing with the first and second plasma are repeated.

Original Abstract Submitted

A substrate processing method for a substrate processing device includes (a) supplying a process gas with specific conditions to a processing container having therein a stage on which a workpiece having an etching target film and a mask on the etching target film is placed, (b) performing a plasma processing on the workpiece with first plasma generated from the process gas under a first plasma generation condition, (c) performing a plasma processing on the workpiece with second plasma generated from the process gas under a second plasma generation condition that is different from the first plasma generation condition in a radio-frequency power condition and a processing time, and is the same as the first plasma generation condition in other conditions, and (d) repeating (b) and (c).