US Patent Application 18032651. Ferroelectric Device and Semiconductor Device simplified abstract
Contents
Ferroelectric Device and Semiconductor Device
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Shunpei Yamazaki of Setagaya, Tokyo (JP)
Yasuhiro Jinbo of Isehara, Kanagawa (JP)
Toshikazu Ohno of Atsugi, Kanagawa (JP)
Yuichi Sato of Isehara, Kanagawa (JP)
Sachie Eto of Isehara, Kanagawa (JP)
Shinobu Kawaguchi of Isehara-Kanagawa (JP)
Ferroelectric Device and Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18032651 titled 'Ferroelectric Device and Semiconductor Device
Simplified Explanation
The patent application describes a ferroelectric device with improved ferroelectricity.
- The device consists of a first conductor, a first insulator, a ferroelectric layer, a second conductor, a second insulator, and a third insulator.
- The second insulator is capable of capturing or fixing hydrogen, while the third insulator inhibits hydrogen diffusion.
- The purpose of the invention is to enhance the performance of the ferroelectric device by controlling the presence and movement of hydrogen within the device.
Original Abstract Submitted
A ferroelectric device having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor over a first insulator, a ferroelectric layer over the first conductor, a second conductor over the ferroelectric layer, a second insulator over the second conductor, and a third insulator surrounding the first conductor, the ferroelectric layer, the second conductor, and the second insulator. The second insulator has a function of capturing or fixing hydrogen, and the third insulator has a function of inhibiting hydrogen diffusion.
