US Patent Application 18031737. QUANTUM DOT FILM LAYER, QUANTUM DOT LIGHT-EMITTING DEVICE, AND FABRICATION METHOD simplified abstract

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QUANTUM DOT FILM LAYER, QUANTUM DOT LIGHT-EMITTING DEVICE, AND FABRICATION METHOD

Organization Name

BOE Technology Group Co., Ltd.

Inventor(s)

Wenhai Mei of Beijing (CN)

QUANTUM DOT FILM LAYER, QUANTUM DOT LIGHT-EMITTING DEVICE, AND FABRICATION METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18031737 titled 'QUANTUM DOT FILM LAYER, QUANTUM DOT LIGHT-EMITTING DEVICE, AND FABRICATION METHOD

Simplified Explanation

The patent application describes a quantum dot film layer, a quantum dot light-emitting device, and a method for fabricating them.

  • The quantum dot film layer consists of quantum dots, a bonding structure, and a fluorine-containing aromatic structure.
  • The bonding structure connects one end of the quantum dots to the film layer.
  • The fluorine-containing aromatic structure connects the other end of the bonding structure to the quantum dots.
  • The bonding structure facilitates the connection between the quantum dots and the fluorine-containing aromatic structure.
  • The quantum dot light-emitting device utilizes this film layer to emit light.
  • The fabrication method involves the formation of the quantum dot film layer by connecting the quantum dots with the bonding and aromatic structures.


Original Abstract Submitted

Provided are a quantum dot film layer, a quantum dot light-emitting device, and a fabrication method. The quantum dot film layer includes: quantum dots; a bonding structure, one end of the bonding structure being connected with the quantum dots; and a fluorine-containing aromatic structure, the fluorine-containing aromatic structure being connected with the other end of the bonding structure to connect with the quantum dots by means of the bonding structure.