US Patent Application 18028606. METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE, SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE MANUFACTURED THEREBY, AND DISPLAY DEVICE COMPRISING SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE, SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE MANUFACTURED THEREBY, AND DISPLAY DEVICE COMPRISING SAME

Organization Name

LG ELECTRONICS INC.


Inventor(s)

Joodo Park of Seoul (KR)

Hooyoung Song of Seoul (KR)

Myungshin Choi of Seoul (KR)

METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE, SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE MANUFACTURED THEREBY, AND DISPLAY DEVICE COMPRISING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18028606 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE, SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE MANUFACTURED THEREBY, AND DISPLAY DEVICE COMPRISING SAME

Simplified Explanation

The patent application describes a method for manufacturing a semiconductor light emitting device package, as well as the package itself and a display device that includes it.

  • The semiconductor light emitting device package includes several layers: a first semiconductor layer, a tether layer, a light emitting structure, a light-transmitting electrode layer, and a post structure.
  • The first semiconductor layer is located on a growth substrate.
  • The tether layer is situated on top of the first semiconductor layer.
  • The light emitting structure is positioned on the tether layer.
  • The light-transmitting electrode layer is placed on the light-emitting structure.
  • The post structure is located on top of the light-transmitting electrode layer.


Original Abstract Submitted

Embodiments relate to a method for manufacturing a semiconductor light emitting device package, a semiconductor light emitting device package manufactured by the method, and a display device including the same. The semiconductor light emitting device package according to the embodiment can include a first semiconductor layer on a growth substrate, a tether layer on the first semiconductor layer, a light emitting structure on the tether layer, a light-transmitting electrode layer on the light-emitting structure, and a post structure on the light-transmitting electrode layer.