US Patent Application 17991365. MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE simplified abstract
Contents
MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE
Organization Name
Inventor(s)
Byung In Lee of Icheon-si Gyeonggi-do (KR)
Eun Mee Kwon of Icheon-si Gyeonggi-do (KR)
In Su Park of Icheon-si Gyeonggi-do (KR)
Hyung Jun Yang of Icheon-si Gyeonggi-do (KR)
Sang Heon Lee of Icheon-si Gyeonggi-do (KR)
Sung Jae Chung of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17991365 titled 'MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE
Simplified Explanation
The present disclosure is about a memory device and its manufacturing method.
- The memory device has a stacked structure with gate lines that are separated and stacked on top of each other.
- It also includes a main plug that is formed vertically to the stacked structure.
- A plug separation pattern is used to divide the main plug into first and second sub-plugs.
- There is a gap in the plug separation pattern.
- A separation layer surrounds the gap.
Original Abstract Submitted
The present disclosure relates to a memory device and a manufacturing method of the memory device. The memory device according to an embodiment includes a stacked structure including gate lines separated from and stacked on top of each other, a main plug formed in a vertical direction to the stacked structure, a plug separation pattern separating the main plug into first and second sub-plugs, a gap formed in the plug separation pattern; and a separation layer surrounding the gap.
