US Patent Application 17989937. SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Kyu Jin Choi of Gyeonggi-do (KR)
Hae Ri Kim of Gyeonggi-do (KR)
Kyu Chan Shim of Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17989937 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The patent application describes a semiconductor memory device that includes two stack structures on a semiconductor substrate.
- The first stack structure and the second stack structure are made up of conductive layers stacked on the semiconductor substrate.
- The device also includes a first vertical structure and a second vertical structure, each with a memory layer and a channel pattern.
- The first vertical structure is in contact with the first stack structure, while the second vertical structure is in contact with the second stack structure.
- A first bit line contact structure is present on the first vertical structure, and a first bit line overlaps with the first bit line contact structure.
- The first bit line contact structure has a shape that widens towards the first bit line.
Original Abstract Submitted
A semiconductor memory device includes: a first stack structure and a second stack structure on a semiconductor substrate; a first vertical structure having a side all in contact with the first stack structure, the first vertical structure including a first memory layer and a first channel pattern; a second vertical structure having a sidewall in contact with the second stack structure, the second vertical structure including a second memory layer and a second channel pattern; a first bit line contact structure on the first vertical structure; and a first bit line overlapping with the first bit line contact structure. Each of the first stack structure and the second stack structure includes conductive layers stacked on the semiconductor substrate to be spaced apart from each other. The first bit line contact structure has a shape which is widened toward the first bit line.
