US Patent Application 17988135. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Geun Hyeong Park of Seoul (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17988135 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
- The patent application describes a semiconductor device that includes a substrate, a capacitor contact structure, a bottom electrode, a capacitor dielectric layer, and a top electrode. - The top electrode consists of an interface layer and an electrode layer. - The interface layer is made up of two layers: a first layer containing molybdenum and oxygen, and a second layer containing molybdenum and nitrogen. - The electrode layer is made up of titanium and nitrogen. - The thickness of the interface layer is smaller than the thickness of the capacitor dielectric layer and the electrode layer.
- The patent application introduces a new semiconductor device design.
- The device includes a unique top electrode structure with an interface layer and an electrode layer.
- The interface layer is composed of two layers, each containing different elements.
- The electrode layer is made up of titanium and nitrogen.
- The thickness of the interface layer is smaller than the thickness of the capacitor dielectric layer and the electrode layer.
Original Abstract Submitted
Disclosed is a semiconductor device comprising a substrate, a capacitor contact structure electrically connected to the substrate, a bottom electrode connected to the capacitor contact structure, a capacitor dielectric layer on the bottom electrode, and a top electrode on the capacitor dielectric layer. The top electrode includes an interface layer on the capacitor dielectric layer and an electrode layer on the interface layer. The interface layer includes a first layer on the capacitor dielectric layer and a second layer on the first layer. The first layer includes molybdenum and oxygen. The second layer includes molybdenum and nitrogen. The electrode layer includes titanium and nitrogen. A thickness of the interface layer is less than a thickness of the capacitor dielectric layer and a thickness of the electrode layer.
