US Patent Application 17986628. MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE simplified abstract

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MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

Hee Youl Lee of Icheon-si Gyeonggi-do (KR)

MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17986628 titled 'MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

Simplified Explanation

This patent application describes a memory device and a method of operating the memory device. Here are the key points:

  • The memory device includes a memory block with strings formed between bit lines and a source line.
  • The device also includes a peripheral circuit that performs read operations on selected memory cells within selected strings.
  • The peripheral circuit includes page buffers that increase the voltage of channels in the strings by applying a first precharge voltage to the bit lines during the set-up phase of the read operation.
  • During the read phase of the operation, a second precharge voltage lower than the first precharge voltage is applied to the bit lines.
  • In the discharge phase of the read operation, the bit lines are discharged.
  • This method allows for efficient reading of memory cells in the memory device.


Original Abstract Submitted

A memory device, and a method of operating the memory device, includes a memory block including strings formed between bit lines and a source line and includes a peripheral circuit configured to perform a read operation of a selected memory cell included in a selected string among the strings. The peripheral circuit includes page buffers configured to increase a voltage of channels of the strings by applying a first precharge voltage to the bit lines in a set-up phase of the read operation, apply a second precharge voltage lower than the first precharge voltage to the bit lines in a read phase of the read operation, and discharge the bit lines in a discharge phase of the read operation.