US Patent Application 17981719. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
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SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
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SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17981719 Titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME'
Simplified Explanation
The abstract describes semiconductor memory devices and their fabrication methods. These devices consist of a peripheral circuit structure with peripheral circuits on a semiconductor substrate and a first dielectric layer on top of the circuits. There is also a cell array structure on the substrate, with a shield layer between the peripheral circuit structure and the cell array structure. The cell array structure includes bit lines, first and second active patterns on the bit lines, first and second word lines that extend in a second direction on the active patterns, data storage patterns on the active patterns, and a second dielectric layer on the substrate. The first dielectric layer has a higher hydrogen concentration than the second dielectric layer.
Original Abstract Submitted
Disclosed are semiconductor memory devices and their fabrication methods. The semiconductor memory device comprises a peripheral circuit structure including peripheral circuits on a semiconductor substrate and a first dielectric layer on the peripheral circuits, a cell array structure on the semiconductor substrate, and a shield layer between the peripheral circuit structure and the cell array structure. The cell array structure includes bit lines, first and second active patterns on the bit lines, first word lines that extend in a second direction on the first active patterns, second word lines that extend in the second direction on the second active patterns, data storage patterns on the first and second active patterns, and a second dielectric layer on the semiconductor substrate. A hydrogen concentration of the first dielectric layer is greater than that of the second dielectric layer.
