US Patent Application 17976481. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract
Contents
MEMORY DEVICE AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
Gyeongcheol Park of Gyeonggi-do (KR)
Minchul Sung of Gyeonggi-do (KR)
Seiyon Kim of Gyeonggi-do (KR)
MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17976481 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF
Simplified Explanation
The patent application describes a memory device that includes a memory cell array, a peripheral circuit, and a control logic.
- The memory cell array consists of multiple memory cells.
- The peripheral circuit is responsible for performing a recovery operation and a normal operation.
- The recovery operation involves applying a recovery voltage to the memory cells to increase their residual polarization.
- The normal operation involves applying a driving voltage to the memory cells for reading or writing data.
- The control logic is responsible for controlling the peripheral circuit when the memory device is powered up.
- Upon power-up, the control logic instructs the peripheral circuit to perform the recovery operation first and then proceed with the normal operation.
Original Abstract Submitted
A memory device includes a memory cell array including a plurality of memory cells; a peripheral circuit configured to perform a recovery operation of applying a recovery voltage to the memory cells for increasing a residual polarization of the memory cells and configured to perform a normal operation of applying a driving voltage to the memory cells for reading data from the memory cells or writing data into the memory cells; and a control logic configured to control, when powered up, the peripheral circuit to perform the recovery operation and then perform the normal operation.
