US Patent Application 17969440. WET RECESS FOR RU SUBTRACTIVE PROCESS simplified abstract

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WET RECESS FOR RU SUBTRACTIVE PROCESS

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Wonhyuk Hong of Clifton Park NY (US)

Jaemyung Choi of Niskayuna NY (US)

Jaejik Baek of Watervliet NY (US)

Janggeun Lee of Delmar NY (US)

Myunghoon Jung of Clifton Park NY (US)

Taesun Kim of Ballston Spa NY (US)

Kang-ill Seo of Albany NY (US)

WET RECESS FOR RU SUBTRACTIVE PROCESS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17969440 titled 'WET RECESS FOR RU SUBTRACTIVE PROCESS

Simplified Explanation

The patent application describes a semiconductor device with a dielectric layer, vias, an adhesion layer, and metal lines.

  • The device includes a dielectric layer, which is a layer of insulating material.
  • The dielectric layer has a plurality of vias, which are small holes or openings.
  • An adhesion layer is deposited on top of the dielectric layer, providing a bonding surface.
  • The device also includes a plurality of metal lines, which are conductive pathways.
  • One of the metal lines has a recess at its bottom surface, creating two sections.
  • The first section of the metal line directly contacts one of the vias.
  • The second section, defined by the recess, does not directly contact the via or the dielectric layer.
  • This arrangement allows for specific electrical connections and isolation within the semiconductor device.


Original Abstract Submitted

A semiconductor device includes a dielectric layer, a plurality of vias formed in the dielectric layer, an adhesion layer deposited on a top surface of the dielectric layer, and a plurality of metal lines. A first metal line of the plurality of metal lines includes a first recess formed at a bottom surface of the first metal line such that a first section of the first metal line directly contacts the first via and a second section of the first metal line defined by the first recess does not directly contact the first via or the dielectric layer in which the first via is formed.

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