US Patent Application 17964373. MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND ELECTRONIC APPARATUS INCLUDING MAGNETIC MEMORY simplified abstract

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MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND ELECTRONIC APPARATUS INCLUDING MAGNETIC MEMORY

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Kwangseok Kim of Seoul (KR)


Je-Geun Park of Seoul (KR)


Kaixuan Zhang of Seoul (KR)


Jingyuan Cui of Seoul (KR)


MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND ELECTRONIC APPARATUS INCLUDING MAGNETIC MEMORY - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 17964373 Titled 'MAGNETIC MEMORY USING SPIN CURRENT, OPERATING METHOD THEREOF, AND ELECTRONIC APPARATUS INCLUDING MAGNETIC MEMORY'

Simplified Explanation

The abstract describes a magnetic memory device that uses a spin current. It consists of two wires that intersect each other, with a data storage layer in between. The data storage layer includes a pinned layer with a fixed magnetic moment, a free layer without a fixed magnetic moment, and an insulating tunnel barrier layer. The wiring that contacts the free layer is made of a conductive material without a spin Hall effect. The free layer is made of a two-dimensional material that has a spin Hall effect, magnetic properties, and metal properties at room temperature. This two-dimensional material is a van der Waals material.


Original Abstract Submitted

Provided are a magnetic memory using a spin current, an operating method thereof, and/or an electronic apparatus including the magnetic memory. The magnetic memory includes, first and second wirings spaced apart from each other and intersecting each other, and a data storage layer between the first and second wirings. The data storage layer includes a pinned layer with a fixed magnetic moment, a free layer spaced apart from the pinned layer and not having a fixed magnetic moment, and an insulating tunnel barrier layer provided between the pinned layer and the free layer. Among the first and second wirings, the wiring contacting the free layer includes a conductive wiring having no spin Hall effect, and the free layer includes a two-dimensional material which at room temperature has a spin Hall effect, magnetic properties, and metal properties. The two-dimensional material includes a two-dimensional van der Waals material.