US Patent Application 17936106. INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHODS OF FORMING THE SAME simplified abstract
INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
MYUNGHOON Jung of Clifton Park NY (US)
WONHYUK Hong of Clifton Park NY (US)
INCHAN Hwang of Schenectady NY (US)
GUNHO Jo of Schenectady NY (US)
KANG-ILL Seo of Albany NY (US)
INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
'This abstract first appeared for US patent application 17936106 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHODS OF FORMING THE SAME'
Simplified Explanation
The abstract describes a method for creating integrated circuit devices. It involves several steps, including creating active regions and an isolation layer, and adding sacrificial stack structures. These structures are then partially replaced with source/drain regions. Front and back contacts are formed, with some parts of the contacts being in an etch stop layer.
Original Abstract Submitted
Methods of forming an integrated circuit devices may include providing first and second active regions, an isolation layer, and first and second sacrificial stack structures. The first and second sacrificial stack structures may contact the first and second active regions, and the first and second sacrificial stack structures may each include a channel layer and a sacrificial layer. The methods may also include forming an etch stop layer on the isolation layer, replacing portions of the first and second sacrificial stack structures with first and second source/drain regions, forming a front contact including a front contact plug, forming a back-side insulator, and forming a back contact plug in the isolation layer and the back-side insulator. At least one of a portion of the front contact plug and a portion of the back contact plug may be in the etch stop layer.
