US Patent Application 17908202. TWO-DIMENSIONAL PHOTONIC-CRYSTAL LASER simplified abstract

From WikiPatents
Jump to navigation Jump to search

TWO-DIMENSIONAL PHOTONIC-CRYSTAL LASER

Organization Name

Mitsubishi Electric Corporation


Inventor(s)

Susumu Noda of Kyoto-shi (JP)

Menaka De Zoysa of Muko-shi (JP)

Kenji Ishizaki of Kyoto-shi (JP)

Wataru Kunishi of Kyoto-shi (JP)

Kentaro Enoki of Nishinomiya-shi (JP)

TWO-DIMENSIONAL PHOTONIC-CRYSTAL LASER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17908202 titled 'TWO-DIMENSIONAL PHOTONIC-CRYSTAL LASER

Simplified Explanation

The patent application describes a two-dimensional photonic-crystal laser design.

  • The laser includes a substrate made of an n-type semiconductor.
  • A p-type cladding layer is placed on top of the substrate, made of a p-type semiconductor.
  • An active layer is positioned on top of the cladding layer.
  • A two-dimensional photonic-crystal layer is placed on top of the active layer, consisting of a plate-shaped base body made of an n-type semiconductor.
  • The photonic-crystal layer includes modified refractive index areas that differ from the base body.
  • A first tunnel layer made of an n-type semiconductor with a higher carrier density than the substrate is located between the substrate and cladding layer.
  • A second tunnel layer made of a p-type semiconductor with a higher carrier density than the p-type semiconductor layer is placed between the first tunnel and cladding layers.
  • A first electrode is located on the lower side of or within the substrate.
  • A second electrode is positioned on the upper side of the two-dimensional photonic-crystal layer.


Original Abstract Submitted

A two-dimensional photonic-crystal laser includes: a substrate made of an n-type semiconductor; a p-type cladding layer on an upper side of the substrate made of a p-type semiconductor; an active layer on an upper side of the cladding layer; a two-dimensional photonic-crystal layer on an upper side of the active layer including a plate-shaped base body made of an n-type semiconductor wherein modified refractive index areas whose refractive index differs from the base body are arranged; a first tunnel layer between the substrate and cladding layer made of an n-type semiconductor having a carrier density higher than the substrate's; a second tunnel layer between the first tunnel and cladding layers, made of a p-type semiconductor having a carrier density higher than the p-type semiconductor layer's; a first electrode on a lower side of or in the substrate; and a second electrode on an upper side of the two-dimensional photonic-crystal layer.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_17908202._TWO-DIMENSIONAL_PHOTONIC-CRYSTAL_LASER_simplified_abstract&oldid=8175"