US Patent Application 17890980. REVERSED TONE PATTERNING METHOD FOR DIPOLE INCORPORATION FOR MULTIPLE THRESHOLD VOLTAGES simplified abstract
REVERSED TONE PATTERNING METHOD FOR DIPOLE INCORPORATION FOR MULTIPLE THRESHOLD VOLTAGES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuo-Cheng Chiang of Hsinchu (TW)
REVERSED TONE PATTERNING METHOD FOR DIPOLE INCORPORATION FOR MULTIPLE THRESHOLD VOLTAGES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17890980 titled 'REVERSED TONE PATTERNING METHOD FOR DIPOLE INCORPORATION FOR MULTIPLE THRESHOLD VOLTAGES
Simplified Explanation
The patent application describes a method for processing an integrated circuit by forming multiple transistors.
- The method involves using a reversed tone patterning process to selectively drive dipoles into the gate dielectric layers of some transistors.
- This process prevents dipoles from entering the gate dielectric layers of other transistors.
- The process can be repeated to create multiple transistors with different threshold voltages.
Original Abstract Submitted
A method for processing an integrated circuit includes forming a plurality of transistors. The method utilizes a reversed tone patterning process to selectively drive dipoles into the gate dielectric layers of some of the transistors while preventing dipoles from entering the gate dielectric layers of other transistors. This process can be repeated to produce a plurality of transistors each having different threshold voltages.
