View source for US Patent Application 17890693. MEMORY DEVICE INCLUDING BOOSTER CIRCUIT FOR TRACKING WORD LINE simplified abstract

=MEMORY DEVICE INCLUDING BOOSTER CIRCUIT FOR TRACKING WORD LINE=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Hyunsung Hong of Kanata CA (US)|Hyunsung Hong of Kanata CA (US)]][[Category:Hyunsung Hong of Kanata CA (US)]]

==MEMORY DEVICE INCLUDING BOOSTER CIRCUIT FOR TRACKING WORD LINE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17890693 titled 'MEMORY DEVICE INCLUDING BOOSTER CIRCUIT FOR TRACKING WORD LINE

==Simplified Explanation==

The patent application is related to a memory device that includes memory cells and a tracking cell.
* The memory device has a set of memory cells connected to a word line.
* It also has a tracking cell connected to a tracking word line and a tracking bit line.
* The memory device includes a tracking booster circuit that boosts the first edge of a first pulse applied to the tracking word line.
* The tracking cell generates a second pulse at the tracking bit line in response to the first pulse with the boosted first edge.
* The memory device also includes a word line controller that applies a third pulse to the word line based on the second pulse.


==Original Abstract Submitted==

Disclosed herein are related to a memory device. In one aspect, the memory device includes a set of memory cells coupled to a word line, and a tracking cell coupled to a tracking word line and a tracking bit line. In one aspect, the memory device includes a tracking booster circuit coupled to the tracking word line. In one aspect, the tracking booster circuit is configured to boost a first edge of a first pulse applied to the tracking word line. In one aspect, the tracking cell is configured to generate a second pulse at the tracking bit line, in response to the first pulse having the boosted first edge. In one aspect, the memory device includes a word line controller configured to apply a third pulse to the word line, based on the second pulse.



[[Category:G11C11/418]]