US Patent Application 17890693. MEMORY DEVICE INCLUDING BOOSTER CIRCUIT FOR TRACKING WORD LINE simplified abstract

MEMORY DEVICE INCLUDING BOOSTER CIRCUIT FOR TRACKING WORD LINE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Hyunsung Hong of Kanata CA (US)

MEMORY DEVICE INCLUDING BOOSTER CIRCUIT FOR TRACKING WORD LINE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17890693 titled 'MEMORY DEVICE INCLUDING BOOSTER CIRCUIT FOR TRACKING WORD LINE

Simplified Explanation

The patent application is related to a memory device that includes memory cells and a tracking cell.

• The memory device has a set of memory cells connected to a word line.
• It also has a tracking cell connected to a tracking word line and a tracking bit line.
• The memory device includes a tracking booster circuit that boosts the first edge of a first pulse applied to the tracking word line.
• The tracking cell generates a second pulse at the tracking bit line in response to the first pulse with the boosted first edge.
• The memory device also includes a word line controller that applies a third pulse to the word line based on the second pulse.

Original Abstract Submitted

Disclosed herein are related to a memory device. In one aspect, the memory device includes a set of memory cells coupled to a word line, and a tracking cell coupled to a tracking word line and a tracking bit line. In one aspect, the memory device includes a tracking booster circuit coupled to the tracking word line. In one aspect, the tracking booster circuit is configured to boost a first edge of a first pulse applied to the tracking word line. In one aspect, the tracking cell is configured to generate a second pulse at the tracking bit line, in response to the first pulse having the boosted first edge. In one aspect, the memory device includes a word line controller configured to apply a third pulse to the word line, based on the second pulse.