US Patent Application 17885727. MEMORY, SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME simplified abstract
Contents
MEMORY, SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
MEMORY, SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17885727 titled 'MEMORY, SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Simplified Explanation
- The patent application is related to semiconductors and specifically focuses on memory. - The method described in the patent involves providing a substrate with multiple conductive contact plugs and insulation layers. - Multiple capacitive layers are then stacked on the substrate surface in a perpendicular direction, with each layer containing capacitances connected to different contact plugs. - The method aims to increase the storage capacity of capacitances and improve product yield. - The innovation has potential benefits in terms of increased memory capacity and enhanced production efficiency.
Original Abstract Submitted
The disclosure relates to the technical field of semiconductors, and to a memory, a semiconductor structure and a method for same. The method includes: providing a substrate, the substrate including a plurality of conductive contact plugs in array distribution and insulation layers separating the conductive contact plugs; and forming a plurality of capacitive layers stacked and distributed in a direction perpendicular to the substrate on a surface of the substrate, each of the capacitive layers including a plurality of capacitances distributed at intervals, and the capacitances being respectively connected to different conductive contact plugs. According to the method, the storage capacity of capacitances can be increased, and product yield can be enhanced.
