US Patent Application 17882869. BACKSIDE DEEP TRENCH ISOLATION (BDTI) STRUCTURE FOR CMOS IMAGE SENSOR simplified abstract
Contents
BACKSIDE DEEP TRENCH ISOLATION (BDTI) STRUCTURE FOR CMOS IMAGE SENSOR
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsin-Hung Chen of Tainan City (TW)
Dun-Nian Yaung of Taipei City (TW)
Jen-Cheng Liu of Hsin-Chu City (TW)
Feng-Chi Hung of Chu-Bei City (TW)
Wen-Chang Kuo of Tainan City (TW)
Hung-Wen Hsu of Tainan City (TW)
Shih-Chang Liu of Alian Township (TW)
BACKSIDE DEEP TRENCH ISOLATION (BDTI) STRUCTURE FOR CMOS IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17882869 titled 'BACKSIDE DEEP TRENCH ISOLATION (BDTI) STRUCTURE FOR CMOS IMAGE SENSOR
Simplified Explanation
- The patent application describes a method for forming an image sensor and its associated device structure. - A backside deep trench isolation (BDTI) structure is created in a substrate to separate multiple pixel regions. - The BDTI structure encloses several photodiodes and consists of two components: a first component located at the intersection of the pixel regions and a second component located at the remaining peripheries of the pixel regions. - The first BDTI component has a smaller depth from the backside of the substrate compared to the second BDTI component. - The purpose of the BDTI structure is to provide isolation between the pixel regions and enhance the performance of the image sensor.
Original Abstract Submitted
In some embodiments, the present disclosure relates to a method for forming an image sensor and associated device structure. A backside deep trench isolation (BDTI) structure is formed in a substrate separating a plurality of pixel regions. The BDTI structure encloses a plurality of photodiodes and comprising a first BDTI component arranged at a crossroad of the plurality of pixel regions and a second BDTI component arranged at remaining peripheries of the plurality of pixel regions. The first BDTI component has a first depth from a backside of the substrate smaller than a second depth of the second BDTI component.
