US Patent Application 17880554. INTEGRATED CIRCUIT DEVICES INCLUDING VIA STRUCTURES HAVING A NARROW UPPER PORTION, AND RELATED FABRICATION METHODS simplified abstract
INTEGRATED CIRCUIT DEVICES INCLUDING VIA STRUCTURES HAVING A NARROW UPPER PORTION, AND RELATED FABRICATION METHODS
Organization Name
Inventor(s)
Tae Sun Kim of Ballston Spa NY (US)
Janggeun Lee of Delmar NY (US)
Jaemyung Choi of Niskayuna NY (US)
Kang-ill Seo of Albany NY (US)
INTEGRATED CIRCUIT DEVICES INCLUDING VIA STRUCTURES HAVING A NARROW UPPER PORTION, AND RELATED FABRICATION METHODS - A simplified explanation of the abstract
'This abstract first appeared for US patent application 17880554 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING VIA STRUCTURES HAVING A NARROW UPPER PORTION, AND RELATED FABRICATION METHODS'
Simplified Explanation
The abstract describes the structure of integrated circuit devices. These devices have an insulating layer and a metal via structure embedded within it. The metal via structure has two parts - a lower portion and an upper portion that is narrower. Additionally, there is a metal line on top of the insulating layer that is connected to the metal via structure. The abstract also mentions that there are methods available to form these integrated circuit devices.
Original Abstract Submitted
Integrated circuit devices are provided. An integrated circuit device includes an insulating layer and a metal via structure that is in the insulating layer. The metal via structure has a lower portion and an upper portion that is narrower than the lower portion. Moreover, the integrated circuit device includes a metal line that is on and electrically connected to the metal via structure. Related methods of forming integrated circuit devices are also provided.
