US Patent Application 17879595. METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURE simplified abstract
Contents
METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shahaji B. More of Hsinchu (TW)
METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17879595 Titled 'METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURE'
Simplified Explanation
The abstract describes a method for creating a semiconductor device structure. It involves several steps, including forming a first layer of semiconductor material on a substrate in a processing chamber. After that, a purge process is performed by introducing a gas containing chlorine into the chamber. Then, a second layer of semiconductor material is formed on top of the first layer. This results in the formation of an interface region between the two layers.
Original Abstract Submitted
A method for forming a semiconductor device structure is described. The method includes forming a first semiconductor layer over a substrate in a processing chamber and performing a purge process. The purge process includes flowing a chlorine-containing gas into the processing chamber. The method further includes forming a second semiconductor layer over the first semiconductor layer, and an interface region is formed between the first and second semiconductor layers.
