US Patent Application 17876331. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shang-Wen Chang of Jhubei City (TW)
Li-Zhen Yu of New Taipei City (TW)
Huan-Chieh Su of Tianzhong Township (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17876331 Titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF'
Simplified Explanation
This abstract describes a method of manufacturing a semiconductor device, specifically a field effect transistor (FET) with a metal gate structure. The process involves forming a first frontside contact between dummy metal gate structures over an isolation insulating layer. A frontside wiring layer is then formed over the first frontside contact. Next, a portion of the substrate is removed from the backside, exposing the bottom of the isolation insulating layer. A first opening is created in the isolation insulating layer, starting from the bottom, to expose the bottom of the first frontside contact. Finally, a first backside contact is formed by filling the first opening with a conductive material, which connects the first frontside contact.
Original Abstract Submitted
In a method of manufacturing a semiconductor device, a field effect transistor (FET) having a metal gate structure, a source and a drain over a substrate is formed. A first frontside contact disposed between dummy metal gate structures is formed over an isolation insulating layer. A frontside wiring layer is formed over the first frontside contact. A part of the substrate is removed from a backside of the substrate so that a bottom of the isolation insulating layer is exposed. A first opening is formed in the isolation insulating layer from the bottom of the isolation insulating layer to expose a bottom of the first frontside contact. A first backside contact is formed by filling the first opening with a conductive material to connect the first frontside contact.
