US Patent Application 17869580. SULFIDE-IMPREGNATED COLUMNAR SILICON ANODE FOR ALL-SOLID-STATE BATTERY AND METHOD OF FORMING THE SAME simplified abstract

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SULFIDE-IMPREGNATED COLUMNAR SILICON ANODE FOR ALL-SOLID-STATE BATTERY AND METHOD OF FORMING THE SAME

Organization Name

GM GLOBAL TECHNOLOGY OPERATIONS LLC

Inventor(s)

Zhe Li of Shanghai (CN)

Xingcheng Xiao of Troy MI (US)

Yong Lu of Shanghai (CN)

Haijing Liu of Shanghai (CN)

Mark W. Verbrugge of Troy MI (US)

SULFIDE-IMPREGNATED COLUMNAR SILICON ANODE FOR ALL-SOLID-STATE BATTERY AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17869580 titled 'SULFIDE-IMPREGNATED COLUMNAR SILICON ANODE FOR ALL-SOLID-STATE BATTERY AND METHOD OF FORMING THE SAME

Simplified Explanation

- The patent application describes an all-solid-state electrochemical cell. - The cell includes an electrode with a current collector and an electroactive material layer. - The electroactive material layer consists of hierarchical silicon columns and a solid sulfide electrolyte. - The solid sulfide electrolyte is formed in-situ and fills a significant portion of the voids in the electroactive material layer. - The voids are the openings between the hierarchical silicon columns. - The hierarchical silicon columns have a longest dimension perpendicular to the major axis of the current collector.


Original Abstract Submitted

An all-solid-state electrochemical cell is provided. The electrochemical cell includes an electrode having a current collector that defines a major axis, and an electroactive material layer disposed on or adjacent to the current collector. The electroactive material layer includes a plurality of hierarchical silicon columns, and a solid sulfide electrolyte. The solid sulfide electrolyte is formed in-situ and fills greater than or equal to about 60 vol. % to less than or equal to about 100 vol. % of voids in the electroactive material layer. The voids being defined by openings between the hierarchical silicon columns. A longest dimension of each hierarchical silicon columns is perpendicular to the major axis of the second current collector.