US Patent Application 17835049. IMAGE SENSOR STRUCTURE simplified abstract
Contents
IMAGE SENSOR STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsiang-Lin Chen of Hsinchu (TW)
Sung-Wen Huang Chen of Hsinchu (TW)
Yin-Kai Liao of Taipei City (TW)
Yi-Shin Chu of Hsinchu City (TW)
Kuan-Chieh Huang of Hsinchu City (TW)
IMAGE SENSOR STRUCTURE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17835049 Titled 'IMAGE SENSOR STRUCTURE'
Simplified Explanation
The abstract describes the invention of image sensors and the methods used to create them. These image sensors consist of a silicon substrate with a germanium region embedded in it. A doped semiconductor isolation layer separates the silicon substrate and the germanium region. There is a heavily p-doped region on top of the germanium region and a heavily n-doped region on top of the silicon substrate. Below the germanium region, there is a first n-type well, and below the heavily n-doped region, there is a second n-type well. Finally, there is a deep n-type well that is in contact with both the first and second n-type wells.
Original Abstract Submitted
Image sensors and methods of forming the same are provided. An image sensor according to the present disclosure includes a silicon substrate, a germanium region disposed in the silicon substrate, a doped semiconductor isolation layer disposed between the silicon substrate and the germanium region, a heavily p-doped region disposed on the germanium region, a heavily n-doped region disposed on the silicon substrate, a first n-type well disposed immediately below the germanium region, a second n-type well disposed immediately below the heavily n-doped region, and a deep n-type well disposed below and in contact with the first n-type well and the second n-type well.
