US Patent Application 17827251. SEMICONDUCTOR DEVICE INCLUDING DEEP TRENCH CAPACITORS AND VIA CONTACTS simplified abstract

SEMICONDUCTOR DEVICE INCLUDING DEEP TRENCH CAPACITORS AND VIA CONTACTS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Po-Chia Lai of Fremont CA (US)]]

[[Category:Stefan Rusu of Sunnyvale CA (US)]]

SEMICONDUCTOR DEVICE INCLUDING DEEP TRENCH CAPACITORS AND VIA CONTACTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17827251 titled 'SEMICONDUCTOR DEVICE INCLUDING DEEP TRENCH CAPACITORS AND VIA CONTACTS

Simplified Explanation

The patent application describes a semiconductor device and a method of manufacturing it.

• The semiconductor device includes multiple deep trench capacitors and multiple via contacts that partially surround the deep trench capacitors.
• The number and locations of the via contacts can be adjusted to meet packaging design requirements.
• The invention aims to improve the design and manufacturing of semiconductor devices.
• The deep trench capacitors and via contacts enhance the performance and functionality of the semiconductor device.
• The method of manufacturing the semiconductor device involves specific techniques and processes.
• The invention may have potential applications in various industries that utilize semiconductor devices.

Original Abstract Submitted

A semiconductor device and a method of manufacturing the semiconductor device are disclosed. In one aspect, the semiconductor device includes a plurality of deep trench capacitors and a plurality of via contacts that at least partially surround the deep trench capacitors. Variations may be made to the number and locations of the plurality of via contacts such that design requirements for the packaging are satisfied.