US Patent Application 17825480. METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH PROGRAMMBLE FEATURE simplified abstract
Contents
METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH PROGRAMMBLE FEATURE
Organization Name
Inventor(s)
YIN-FA Chen of NEW TAIPEI CITY (TW)
JUI-HSIU Jao of TAOYUAN CITY (TW)
METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH PROGRAMMBLE FEATURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17825480 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH PROGRAMMBLE FEATURE
Simplified Explanation
- The patent application describes a method of manufacturing a semiconductor device. - The method involves using a substrate with two islands, where the second island is larger than the first island. - An insulative layer is deposited to cover the substrate. - A conductive feature is formed that penetrates through the insulative layer and makes contact with the second island. - A conductive line is then formed on top of the insulative layer and connected to the conductive feature.
- The method aims to provide a manufacturing process for semiconductor devices.
- The use of two islands on the substrate allows for different areas and sizes.
- The insulative layer serves as a protective covering for the substrate.
- The conductive feature provides a connection to the larger second island.
- The conductive line allows for electrical connectivity in the semiconductor device.
Original Abstract Submitted
The present application provides a method of manufacturing a semiconductor device. The method includes steps of providing a substrate comprising a first island and a second island, wherein the first island has a first area and the second island has a second area greater than the first area; depositing an insulative layer to cover the substrate; forming a conductive feature penetrating through the insulative layer and contacting the second island; and forming a conductive line on the insulative layer and connected to the conductive feature.
