US Patent Application 17825225. DIELECTRIC PROTECTION LAYER CONFIGURED TO INCREASE PERFORMANCE OF MEMS DEVICE simplified abstract
DIELECTRIC PROTECTION LAYER CONFIGURED TO INCREASE PERFORMANCE OF MEMS DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wen-Chuan Tai of Hsinchu City (TW)
Hsiang-Fu Chen of Zhubei City (TW)
Chia-Ming Hung of Taipei City (TW)
I-Hsuan Chiu of Taipei City (TW)
DIELECTRIC PROTECTION LAYER CONFIGURED TO INCREASE PERFORMANCE OF MEMS DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17825225 titled 'DIELECTRIC PROTECTION LAYER CONFIGURED TO INCREASE PERFORMANCE OF MEMS DEVICE
Simplified Explanation
The abstract describes an integrated chip design that includes a microelectromechanical system (MEMS) substrate with a movable membrane over a cavity. The MEMS substrate is positioned over an interconnect structure and an upper dielectric structure on a semiconductor substrate.
- The integrated chip includes a movable membrane over a cavity, which is part of a microelectromechanical system (MEMS) substrate.
- The MEMS substrate is positioned over an interconnect structure and an upper dielectric structure on a semiconductor substrate.
- A cavity electrode is located beneath the cavity and a dielectric protection layer is placed on top of the cavity electrode.
- The dielectric protection layer has a higher dielectric constant than the upper dielectric structure.
- Stopper structures are placed within the cavity between the movable membrane and the cavity electrode.
Original Abstract Submitted
Various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate. An upper dielectric structure overlies the interconnect structure. A microelectromechanical system (MEMS) substrate overlies the upper dielectric structure. A cavity is defined between the MEMS substrate and the upper dielectric structure. The MEMS substrate comprises a movable membrane over the cavity. A cavity electrode is disposed in the upper dielectric structure and underlies the cavity. A plurality of stopper structures is disposed in the cavity between the movable membrane and the cavity electrode. A dielectric protection layer is disposed along a top surface of the cavity electrode. The dielectric protection layer has a greater dielectric constant than the upper dielectric structure.
