US Patent Application 17824012. SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE simplified abstract
Contents
SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE
Organization Name
Inventor(s)
CHIH-HSUAN Yeh of TAOYUAN CITY (TW)
SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17824012 titled 'SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE
Simplified Explanation
The patent application describes a semiconductor device with a contact structure.
- The device includes layers such as a bottom dielectric layer, a bottom conductive layer, an etch stop layer, and a first inter-dielectric layer.
- The contact structure consists of a body portion and a contact portion.
- The body portion is positioned along the first inter-dielectric layer and extends to the etch stop layer.
- The contact portion is located in the etch stop layer and makes contact with both the body portion and the bottom conductive layer.
- The body portion is wider than the contact portion.
Original Abstract Submitted
The present application discloses a semiconductor device with a contact structure. The semiconductor device includes a bottom dielectric layer positioned on a substrate; a bottom conductive layer positioned in the bottom dielectric layer; an etch stop layer positioned on the bottom conductive layer; a first inter-dielectric layer positioned on the etch stop layer; and a contact structure including a body portion positioned along the first inter-dielectric layer and extending to the etch stop layer, and a contact portion positioned in the etch stop layer to and contacting the body portion and the bottom conductive layer. A width of the body portion is greater than a width of the contact portion.
