US Patent Application 17824011. MEMORY DEVICE HAVING PROTRUSION OF WORD LINE simplified abstract
Contents
MEMORY DEVICE HAVING PROTRUSION OF WORD LINE
Organization Name
Inventor(s)
JAR-MING Ho of TAIPEI CITY (TW)
MEMORY DEVICE HAVING PROTRUSION OF WORD LINE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17824011 titled 'MEMORY DEVICE HAVING PROTRUSION OF WORD LINE
Simplified Explanation
The abstract describes a memory device with multiple layers and channels.
- The memory device includes a substrate, a dielectric layer, and multiple metallization layers and channel layers.
- The dielectric layer is placed on the substrate.
- The first metallization layer is located within the dielectric layer and extends in a specific direction.
- The first channel layer is surrounded by the first metallization layer.
- Similarly, the second metallization layer is also within the dielectric layer and extends in the same direction.
- The second channel layer is surrounded by the second metallization layer.
- The first metallization layer has a protruding portion that extends towards the second metallization layer.
Original Abstract Submitted
The present disclosure provides a memory device. The memory device includes a substrate, a dielectric layer, a first metallization layer, a first channel layer, a second metallization layer, and a second channel layer. The dielectric layer is disposed on the substrate. The first metallization layer is disposed within the dielectric layer and extends along a first direction. The first channel layer is surrounded by the first metallization layer. The second metallization layer is disposed within the dielectric layer and extends along the first direction. The second channel layer is surrounded by the second metallization layer. The first metallization layer includes a first protruding portion protruding toward the second metallization layer.
