US Patent Application 17824010. SEMICONDUCTOR DEVICE HAVING PROTRUSION OF WORD LINE simplified abstract

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SEMICONDUCTOR DEVICE HAVING PROTRUSION OF WORD LINE

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

CHIN-TE Kuo of NEW TAIPEI CITY (TW)

SEMICONDUCTOR DEVICE HAVING PROTRUSION OF WORD LINE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824010 titled 'SEMICONDUCTOR DEVICE HAVING PROTRUSION OF WORD LINE

Simplified Explanation

The abstract describes a semiconductor device that includes various layers and components.

  • The device includes a substrate, which serves as a base for the other layers.
  • A dielectric layer is placed on top of the substrate.
  • Within the dielectric layer, there is a first metallization layer that extends in a specific direction.
  • The first metallization layer surrounds a first channel layer.
  • Similarly, there is a second metallization layer within the dielectric layer, also extending in the same direction.
  • The second metallization layer surrounds a second channel layer.
  • Notably, the first metallization layer has a protruding portion that extends towards the second metallization layer.


Original Abstract Submitted

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a dielectric layer, a first metallization layer, a first channel layer, a second metallization layer, and a second channel layer. The dielectric layer is disposed on the substrate. The first metallization layer is disposed within the dielectric layer and extends along a first direction. The first channel layer is surrounded by the first metallization layer. The second metallization layer is disposed within the dielectric layer and extends along the first direction. The second channel layer is surrounded by the second metallization layer. The first metallization layer includes a first protruding portion protruding toward the second metallization layer.

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