US Patent Application 17822246. INTEGRATED CIRCUIT DEVICES INCLUDING A VIA AND METHODS OF FORMING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT DEVICES INCLUDING A VIA AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
JAEMYUNG Choi of Niskayuna NY (US)
KANG-ILL Seo of Albany NY (US)
JANGGEUN Lee of Delmar NY (US)
INTEGRATED CIRCUIT DEVICES INCLUDING A VIA AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
'This abstract first appeared for US patent application 17822246 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING A VIA AND METHODS OF FORMING THE SAME'
Simplified Explanation
The abstract describes integrated circuit devices and the methods used to create them. These devices consist of various components, including a lower metal via, an upper metal via, a lower metal wire, and an upper metal wire. The lower metal wire connects to the lower metal via and the upper metal wire connects to the upper metal via. Both the lower metal via and the upper metal via are made of either ruthenium (Ru) or molybdenum (Mo).
Original Abstract Submitted
Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a lower metal via, an upper metal via, a lower metal wire comprising a lower surface contacting the lower metal via and an upper surface contacting the upper metal via, and an upper metal wire on the upper metal via. The upper metal via is between the lower metal wire and the upper metal wire, and each of the lower metal via, the lower metal wire and the upper metal via comprises ruthenium (Ru) or molybdenum (Mo).
