US Patent Application 17819679. Semiconductor Devices Including Backside Power Via and Methods of Forming the Same simplified abstract
Semiconductor Devices Including Backside Power Via and Methods of Forming the Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Po-Hsien Cheng of Hsinchu (TW)
Semiconductor Devices Including Backside Power Via and Methods of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 17819679 titled 'Semiconductor Devices Including Backside Power Via and Methods of Forming the Same
Simplified Explanation
- The patent application describes methods of forming vias in semiconductor devices to connect source/drain regions to backside interconnect structures. - The semiconductor device includes a conductive feature adjacent a gate structure, a dielectric layer, a metal via embedded in the dielectric layer, and a liner layer between the metal via and the dielectric layer. - The liner layer is made of boron nitride, which helps improve the performance and reliability of the via. - The use of boron nitride as the liner layer provides better electrical insulation and thermal conductivity. - The methods described in the patent application can be used to enhance the overall functionality and efficiency of semiconductor devices.
Original Abstract Submitted
Methods of forming vias for coupling source/drain regions to backside interconnect structures in semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a conductive feature adjacent a gate structure; a dielectric layer on the conductive feature and the gate structure; a metal via embedded in the dielectric layer; and a liner layer between and in contact with the metal via and the dielectric layer, the liner layer being boron nitride.
