US Patent Application 17816435. TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY simplified abstract

TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

YOUMING Liu of Hefei City (CN)

Deyuan Xiao of Hefei City (CN)

TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17816435 titled 'TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY

Simplified Explanation

The abstract describes a patent application related to a transistor and its manufacturing method, as well as a memory, in the field of semiconductors.

• The transistor includes a channel with multiple accommodation spaces.
• It has multiple gates with the same extension direction, each having a first end inside an accommodation space and a second end outside.
• A dielectric layer is located between the gate and the channel, providing insulation and isolation.
• The transistor also includes a source at one end of the channel and a drain at the other end, with a spacing between them.

Original Abstract Submitted

The present disclosure provides a transistor and a manufacturing method thereof, and a memory, and relates to the technical field of semiconductors. The transistor includes: a channel, wherein a plurality of accommodation spaces are formed therein; a plurality of gates, wherein the plurality of gates have a same extension direction and each have a first end and a second end that are opposite, the first end of the gate is located inside one of the accommodation spaces, and the second end of the gate is located outside the corresponding accommodation space; a dielectric layer, located between the gate and the channel, insulating and isolating the gate and the channel; a source, provided at one end of the channel; and a drain, provided at the other end of the channel, wherein the drain and the source are spaced apart.