US Patent Application 17804752. ELECTRONIC DEVICES COMPRISING SEGMENTED HIGH-K DIELECTRIC MATERIALS AND STORAGE NODE MATERIALS, RELATED SYSTEMS, AND METHODS OF FORMING simplified abstract
ELECTRONIC DEVICES COMPRISING SEGMENTED HIGH-K DIELECTRIC MATERIALS AND STORAGE NODE MATERIALS, RELATED SYSTEMS, AND METHODS OF FORMING
Organization Name
Inventor(s)
Byeung Chul Kim of Boise ID (US)
Ye Xiang Hong of Singapore (SG)
Sok Han Wong of Singapore (SG)
ELECTRONIC DEVICES COMPRISING SEGMENTED HIGH-K DIELECTRIC MATERIALS AND STORAGE NODE MATERIALS, RELATED SYSTEMS, AND METHODS OF FORMING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17804752 titled 'ELECTRONIC DEVICES COMPRISING SEGMENTED HIGH-K DIELECTRIC MATERIALS AND STORAGE NODE MATERIALS, RELATED SYSTEMS, AND METHODS OF FORMING
Simplified Explanation
- The patent application describes an electronic device that includes a stack structure made up of alternating dielectric and conductive materials. - The conductive materials in the stack have two regions, and there are pillars that extend vertically through the stack structure, located next to the second regions of the conductive materials. - The pillars have cell films that are made up of various materials, including a high-k dielectric material, a barrier oxide material, a storage node material, a tunneling material, and a channel material. - Segments of the high-k dielectric material, barrier oxide material, and storage node material are located next to the second regions of the conductive materials. - The length of these segments of high-k dielectric material and storage node material adjacent to the second regions is greater than the height of the first regions of the conductive materials.
Original Abstract Submitted
An electronic device includes a stack structure including vertically alternating dielectric materials and conductive materials, the conductive materials including first regions and second regions, and pillars extending vertically through the stack structure, the pillars adjacent to the second regions of the conductive materials. The pillars include cell films adjacent to the second regions, the cell films including a high-k dielectric material, a barrier oxide material, a storage node material, a tunneling material, and a channel material. Segments of each of the high-k dielectric material, the barrier oxide material, and the storage node material are adjacent to the second regions. A length of the segments of high-k dielectric material and a length of the segments of storage node material adjacent to the second regions are greater than a height of the first regions of the conductive materials. Related methods and systems are also disclosed.
